SQM40031EL www.vishay.com vishay siliconix s17-0071-rev. a, 23-jan-17 1 document number: 70297 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive p-channel 40 v (d-s) 175 c mosfet features ? trenchfet ? power mosfet ? package with low thermal resistance ? 100 % r g and uis tested ? aec-q101 qualified ? material categorization: ? for definitions of co mpliance please see www.vishay.com/doc?99912 ? ? ? ? ? ? ? ? notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" square pcb (fr4 material). product summary v ds (v) -40 r ds(on) ( ? ) at v gs = -10 v 0.00300 r ds(on) ( ? ) at v gs = -4.5 v 0.00380 i d (a) -120 configuration single package to-263 s g d p-channel mosfet to-26 3 top view g d s g s absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -40 v gate-source voltage v gs 20 continuous drain current a t c = 25 c i d -120 a t c = 125 c -120 continuous source curre nt (diode conduction) a i s -120 pulsed drain current b i dm -300 single pulse avalanche current l = 0.1 mh i as -60 single pulse avalanche energy e as 180 mj maximum power dissipation b t c = 25 c p d 375 w t c = 125 c 125 operating junction and storage temperature range t j , t stg -55 to +175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 40 c/w junction-to-case (drain) r thjc 0.4
SQM40031EL www.vishay.com vishay siliconix s17-0071-rev. a, 23-jan-17 2 document number: 70297 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. ? ? ? stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. ? specifications (t c = 25 c, unless otherwise noted) parameter symbol test cond itions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = -250 a -40 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = -250 a -1.5 -2.0 -2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = -40 v - - -1 a v gs = 0 v v ds = -40 v, t j = 125 c - - -50 v gs = 0 v v ds = -40 v, t j = 175 c - - -450 on-state drain current a i d(on) v gs = -10 v v ds ? -5 v -100 - - a drain-source on-state resistance a r ds(on) v gs = -10 v i d = -30 a - 0.00250 0.00300 ? v gs = -10 v i d = -30 a, t j = 125 c - - 0.00440 v gs = -10 v i d = -30 a, t j = 175 c - - 0.00520 v gs = -4.5 v i d = -25 a - 0.00316 0.00380 forward transconductance b g fs v ds = -15 v, i d = -25 a - 123 - s dynamic b input capacitance c iss v gs = 0 v v ds = -25 v, f = 1 mhz - 30 000 39 000 pf output capacitance c oss - 1850 2500 reverse transfer capacitance c rss - 1550 2100 total gate charge c q g v gs = -10 v v ds = -20 v, i d = -80 a - 527 800 nc gate-source charge c q gs -89 - gate-drain charge c q gd - 100 - gate resistance r g f = 1 mhz 1 2.26 3.5 ? turn-on delay time c t d(on) v dd = -20 v, r l = 0.3 ? i d ? -80 a, v gen = -10 v, r g = 1 ? -2135 ns rise time c t r -3050 turn-off delay time c t d(off) - 250 400 fall time c t f - 165 300 source-drain diode ratings and characteristics b pulsed current a i sm ---300a forward voltage v sd i f = -80 a, v gs = 0 v - -0.85 -1.5 v body diode reverse recovery time t rr i f = -50 a, di/dt = 100 a/s - 70 140 ns body diode reverse recovery charge q rr - 134 270 nc reverse recovery fall time t a -43 - ns reverse recovery rise time t b -35 - body diode peak reverse recovery current i rm(rec) --4-8a
SQM40031EL www.vishay.com vishay siliconix s17-0071-rev. a, 23-jan-17 3 document number: 70297 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 10 100 1000 10000 0 40 80 120 160 200 0246810 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) 2nd line v gs = 10 v thru 4 v v gs = 3 v 10 100 1000 10000 0 40 80 120 160 200 0 1020304050 axis title 1st line 2nd line 2nd line g fs - transconductance (s) i d - drain current (a) 2nd line t c = 25 c t c = -55 c t c = 125 c 10 100 1000 10000 0 7200 14400 21600 28800 36000 0 8 16 24 32 40 axis title 1st line 2nd line 2nd line c - capacitance (pf) v ds - drain-to-source voltage (v) 2nd line c rss c oss c iss 10 100 1000 10000 0 30 60 90 120 150 0246810 axis title 1st line 2nd line 2nd line i d - drain current (a) v gs - gate-to-source voltage (v) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0.000 0.002 0.004 0.006 0.008 0.010 0 20406080100 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () i d - drain current (a) 2nd line v gs = 4.5 v v gs = 10 v 10 100 1000 10000 0 2 4 6 8 10 0 120 240 360 480 600 axis title 1st line 2nd line 2nd line v gs - gate-to-source voltage (v) q g - total gate charge (nc) 2nd line i d = 80 a v ds = 20 v
SQM40031EL www.vishay.com vishay siliconix s17-0071-rev. a, 23-jan-17 4 document number: 70297 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown vs . junction temperature source drain diode forward voltage threshold voltage safe operating area 10 100 1000 10000 0.5 0.8 1.1 1.4 1.7 2.0 -50-25 0 255075100125150175 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance (normalized) t j - junction temperature (c) 2nd line i d = 30 a v gs = 10 v v gs = 4.5 v 10 100 1000 10000 0.000 0.005 0.010 0.015 0.020 0.025 0246810 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () v gs - gate-to-source voltage (v) 2nd line t j = 25 c t j = 150 c 10 100 1000 10000 -56 -53 -50 -47 -44 -41 -50-25 0 255075100125150175 axis title 1st line 2nd line 2nd line v ds - drain-to-source voltage (v) t j - junction temperature (c) 2nd line i d = 1 ma 10 100 1000 10000 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 axis title 1st line 2nd line 2nd line i s - source current (a) v sd - source-to-drain voltage (v) 2nd line t j = 150 c t j = 25 c 10 100 1000 10000 -0.5 -0.1 0.3 0.7 1.1 1.5 -50 -25 0 25 50 75 100 125 150 175 axis title 1st line 2nd line 2nd line v gs(th) variance (v) t j - temperature (c) 2nd line i d = 5 ma i d = 250 a 10 100 1000 10000 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) (1) v gs > minimum v gs at which r ds(on) is specified i dm limited limited by r ds(on) (1) t c = 25 c single pulse bvdss limited 100 ms, 1 s, 10 s, dc 10 ms 1 ms 100 s i d limited
SQM40031EL www.vishay.com vishay siliconix s17-0071-rev. a, 23-jan-17 5 document number: 70297 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs ? - normalized transient thermal impedance junction to ambient (25 c) ? - normalized transient thermal impedance junction to case (25 c) ? are given for general guidelines only to enable the user to ge t a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. ? ? ? ? ? ? ? ? ? ? ? vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70297 . 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 1 0.01 0.001 0.1 0.0001 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance square wave pulse duration (s) 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 normalized ef fective transient thermal impedance 1 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5
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